GaAs-JFET cryogenic readout electronics for the superconducting terahertz digital camera

Author

Matsuo, Hiroshi ; Hibi, Yasunori ; Nagata, Hirohisa ; Ikeda, Hirokazu ; Fujiwara, Mikio

Author_Institution

Nat. Astron. Obs. of Japan, Mitaka, Japan

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

1

Abstract

We have developed GaAs-JFET based cryogenic readout electronics for high impedance detectors such as superconducting tunnel junction detectors which operate at cryogenic temperature at less than 1 K. The readout electronics consists of AC-coupled capacitive trans-impedance amplifiers, sample-and-holds, multiplexers and shift-registers. GaAs-JFET integrated circuits have been fabricated to realize 32-channel readout modules.

Keywords

III-V semiconductors; JFET integrated circuits; amplifiers; cryogenic electronics; gallium arsenide; multiplexing equipment; readout electronics; submillimetre wave detectors; superconducting photodetectors; 32-channel readout modules; AC-coupled capacitive trans-impedance amplifiers; GaAs; gallium arsenide-JFET cryogenic readout electronics; high-impedance detectors; integrated circuits; multiplexers; sample-and-holds; shift-registers; superconducting terahertz digital camera; superconducting tunnel junction detectors; Cryogenics; Detectors; Digital cameras; Impedance; Josephson junctions; Multiplexing; Readout electronics; Semiconductor counters; Superconducting integrated circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5324790

Filename

5324790