DocumentCode :
2317774
Title :
Modeling of field emission microtriodes with Si semiconductor emitters
Author :
Nicolaescu, Dan ; Filip, Valeriu ; Itoh, Junji ; Okuyama, Fumio
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fYear :
1998
fDate :
19-24 July 1998
Firstpage :
13
Lastpage :
14
Abstract :
This paper has as aim to analyze the field emission from field emission microtriode (FEMT) like structures using silicon-based emitters intended for field emission displays (FEDs).
Keywords :
electron field emission; elemental semiconductors; silicon; triodes; vacuum microelectronics; Si; Si semiconductor emitter; field emission microtriode; Anodes; Circuits; Current density; Distributed computing; Electron emission; Flat panel displays; Iron; Laplace equations; MOSFETs; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
Type :
conf
DOI :
10.1109/IVMC.1998.728614
Filename :
728614
Link To Document :
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