Title :
Observation of the resonance-tunneling in field emission structures
Author :
Litochenko, V.G. ; Evtukh, A.A. ; Goncharuk, N.M.
Author_Institution :
Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The theoretical and experimental investigations of electron field emission from silicon-based resonance-tunneling layered structures have been performed. The simulation of emission processes in multilayer cathodes (MLC) with quantum well (QW) have been fulfilled.
Keywords :
cathodes; electron field emission; elemental semiconductors; resonant tunnelling; semiconductor quantum wells; silicon; Si; electron field emission; layered structure; multilayer cathode; quantum well; resonance tunneling; Cathodes; Electron emission; Electron traps; Elementary particle vacuum; Resonance; Shape; Silicon; Space charge; Temperature; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728617
