DocumentCode
2317831
Title
Theoretical description of intensive electron emission from ultra-sharp nanotips
Author
Glazanov, D.V. ; Fursey, G.N.
Author_Institution
Bonch-Bruevitsch Univ. of Telecommun., St. Petersburg, Russia
fYear
1998
fDate
19-24 July 1998
Firstpage
23
Abstract
Summary form only given, as follows. In the presented work, electron field emission from a single atom on the apex of an atomically sharp tip is described in terms of a model of electron tunneling from a state, localized in the spherical potential well. In such a formulation, the considered problem is partially similar to the ´classical´ approach to alpha decay treatment. Nevertheless, it should be noted that, traditionally, in the alpha decay case: 1) the WKB expression for the probability of particle tunneling is used; and 2) the image forces potential is not taken into account. We solve the Schrodinger equation numerically. A numerical treatment allowed us to avoid difficulties, connected with the WKB approach validity for extremely high field strengths, when the tunneling probability can be close to unity. It is shown, in particular, that the image forces potential, of course, must be taken into account but the distinction in the expression for this potential has practically no influence upon Fowler-Nordheim plots. Electron energy distributions were calculated for different barrier shapes. The limit brightness abilities of point electron sources were analyzed in dependence of the apex of the nanoemitter curvature radius and applied electric field. The problems of electron source coherence were also considered.
Keywords
Schrodinger equation; electron field emission; numerical analysis; tunnelling; vacuum microelectronics; Fowler-Nordheim plots; Schrodinger equation; applied electric field; barrier shapes; electron energy distributions; electron field emission; electron source coherence; electron tunneling model; image forces potential; intensive electron emission; limit brightness abilities; nanoemitter curvature radius; numerical treatment; point electron sources; spherical potential well; theoretical description; ultra-sharp nanotips; Brightness; Electron emission; Electron sources; Paper technology; Potential well; Radioactive decay; Schrodinger equation; Shape; Tunneling; Vacuum technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728619
Filename
728619
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