An expermental 16Mb DRAM with reduced peak-current noise
Author :
Chin, Daeje ; Kim, Changhyun ; Choi, Hoon ; Min, Dong S. ; Hwang, Hong S. ; Hoont Choi ; Cho, Soo I. ; Chung, Tae Y. ; Park, Chan J. ; Shin, Yoon S. ; Suh, Kwangpyuk ; Park, Yong E.
Author_Institution :
Samsung Electronics Co., Ltd.
fYear :
1989
fDate :
25-27 May 1989
Firstpage :
113
Lastpage :
114
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 1989. Digest of Technical Papers., 1989 Symposium on
