Tubeless packaging of field emission display using glass to glass electrostatic bonding technology

Author

Jeong, J.W. ; Ju, B.-K. ; Lee, D.J. ; Lee, Y.H. ; Lee, N.Y. ; Ko, Y.W. ; Moon, Y.G. ; Choi, D.H. ; Oh, M.H.

Author_Institution

Div. of Electron. Mater., Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

1998

fDate

19-24 July 1998

Firstpage

42

Lastpage

43

Abstract

Glass-to-glass electrostatic bonding has been developed for tubeless packaging of field emitter arrays (FEAs). Amorphous silicon film was deposited on 0080 glass by means of RF sputtering method. In order to investigate the applicability of this bonding technique to in-situ vacuum packaging of FED, the hermetic sealing test of FED panel whose exhausting hole was sealed by this technique was accomplished under 10/sup -7/ torr vacuum level.

Keywords

field emission displays; joining processes; seals (stoppers); semiconductor device packaging; RF sputtering method; Si; bonding technique; exhausting hole; field emission display; glass to glass electrostatic bonding technology; hermetic sealing test; in-situ vacuum packaging; tubeless packaging; vacuum level; Amorphous silicon; Bonding; Electrostatics; Field emitter arrays; Flat panel displays; Glass; Packaging; Radio frequency; Semiconductor films; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1998. Eleventh International

Conference_Location

Asheville, NC, USA

Print_ISBN

0-7803-5096-0

Type

conf

DOI

10.1109/IVMC.1998.728629

Filename

728629