Title :
Tubeless packaging of field emission display using glass to glass electrostatic bonding technology
Author :
Jeong, J.W. ; Ju, B.-K. ; Lee, D.J. ; Lee, Y.H. ; Lee, N.Y. ; Ko, Y.W. ; Moon, Y.G. ; Choi, D.H. ; Oh, M.H.
Author_Institution :
Div. of Electron. Mater., Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
Glass-to-glass electrostatic bonding has been developed for tubeless packaging of field emitter arrays (FEAs). Amorphous silicon film was deposited on 0080 glass by means of RF sputtering method. In order to investigate the applicability of this bonding technique to in-situ vacuum packaging of FED, the hermetic sealing test of FED panel whose exhausting hole was sealed by this technique was accomplished under 10/sup -7/ torr vacuum level.
Keywords :
field emission displays; joining processes; seals (stoppers); semiconductor device packaging; RF sputtering method; Si; bonding technique; exhausting hole; field emission display; glass to glass electrostatic bonding technology; hermetic sealing test; in-situ vacuum packaging; tubeless packaging; vacuum level; Amorphous silicon; Bonding; Electrostatics; Field emitter arrays; Flat panel displays; Glass; Packaging; Radio frequency; Semiconductor films; Vacuum technology;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728629
