DocumentCode :
2318013
Title :
Monolithic integration of a semiconductor optical amplifier (SOA) and a high-speed waveguide p-i-n photodiode using asymmetric twin-waveguide technology
Author :
Xia, F. ; Wei, I. ; Menon, Vinod ; Forrest, S.
Author_Institution :
Princeton Univ., NJ, USA
fYear :
2003
fDate :
23-28 March 2003
Firstpage :
189
Abstract :
An optical mode transformer, semiconductor optical amplifier, and waveguide photodiode are monolithically integrated without regrowth using separately optimized materials based on asymmetric twin-waveguide technology. The device shows a peak responsivity of 11 A/W and a 3 dB electrical bandwidth of 36 GHz.
Keywords :
light absorption; monolithic integrated circuits; optical waveguides; p-i-n photodiodes; semiconductor optical amplifiers; transformers; 3 dB; 36 GHz; SOA; asymmetric twin-waveguide technology; electrical bandwidth; monolithic integration; optical mode transformer; optimized materials; p-i-n photodiode; semiconductor optical amplifier; waveguide photodiode; High speed optical techniques; Integrated optics; Monolithic integrated circuits; Optical materials; Optical waveguides; PIN photodiodes; Semiconductor materials; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
Type :
conf
DOI :
10.1109/OFC.2003.1247592
Filename :
1247592
Link To Document :
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