Title :
Detection of terahertz radiation by plasma waves in field effect transistors
Author :
Knap, W. ; Deng, Y. ; Kachorovskii, V. ; Rumyantsev, S. ; Shur, M.S.
Author_Institution :
Groupe d´´Etudes des Semiconducteurs, Univ. Montpellier II, France
Abstract :
We review our recent experimental and theoretical studies of the detection of terahertz radiation in GaAs/AlGaAs heterostructure field effect transistors (FET´s) in a wide range of temperatures (8-300 K) and for frequencies ranging from 0.1 THz to 0.6 THz. The resonant detection of 0.6 THz radiation by the two-dimensional electron plasma confined in 0.15 μm gate length GaAs/AlGaAs field effect transistors is demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor plasma; submillimetre wave detectors; submillimetre wave transistors; two-dimensional electron gas; 0.1 to 0.6 THz; 0.15 micron; 2D electron plasma; 2DEG; 8 to 300 K; GaAs-AlGaAs; GaAs/AlGaAs HFETs; THz radiation; heterostructure field effect transistors; resonant detection; terahertz radiation detection; two-dimensional electron plasma; FETs; Frequency; Gallium arsenide; HEMTs; MODFETs; Plasma confinement; Plasma temperature; Plasma waves; Radiation detectors; Temperature distribution;
Conference_Titel :
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN :
0-7803-7630-7
DOI :
10.1109/THZ.2002.1037577
