Detection of terahertz radiation by plasma waves in field effect transistors

Author

Knap, W. ; Deng, Y. ; Kachorovskii, V. ; Rumyantsev, S. ; Shur, M.S.

Author_Institution

Groupe d´´Etudes des Semiconducteurs, Univ. Montpellier II, France

fYear

2002

fDate

2002

Firstpage

19

Lastpage

22

Abstract

We review our recent experimental and theoretical studies of the detection of terahertz radiation in GaAs/AlGaAs heterostructure field effect transistors (FET´s) in a wide range of temperatures (8-300 K) and for frequencies ranging from 0.1 THz to 0.6 THz. The resonant detection of 0.6 THz radiation by the two-dimensional electron plasma confined in 0.15 μm gate length GaAs/AlGaAs field effect transistors is demonstrated.

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor plasma; submillimetre wave detectors; submillimetre wave transistors; two-dimensional electron gas; 0.1 to 0.6 THz; 0.15 micron; 2D electron plasma; 2DEG; 8 to 300 K; GaAs-AlGaAs; GaAs/AlGaAs HFETs; THz radiation; heterostructure field effect transistors; resonant detection; terahertz radiation detection; two-dimensional electron plasma; FETs; Frequency; Gallium arsenide; HEMTs; MODFETs; Plasma confinement; Plasma temperature; Plasma waves; Radiation detectors; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on

Print_ISBN

0-7803-7630-7

Type

conf

DOI

10.1109/THZ.2002.1037577

Filename

1037577