Title :
Analysis of deterioration by partial discharge of XLPE using GCMS and FTIR
Author :
Sekii, Yasuo ; Yamauchi, Kazuki
Author_Institution :
Sekii Consulting Eng., Funabashi
Abstract :
Deterioration of polymeric dielectrics by partial discharge (PD) might occur at defects in an insulation layer. To elucidate the mechanism of deterioration by PD, measurements were conducted of the gas components produced during deterioration and the substances created on the surface of cross-linked polyethylene (XLPE) samples subjected to PD. Gas component measurements were performed using an experimental apparatus including GC-MS. Results of gas analyses showed that carbon dioxide (CO2) was produced when the XLPE sample is subjected to the PD in a N2+O2 gas atmosphere. The amount of generated CO2 was confirmed to increase concomitantly with the period of voltage application. The FTIR spectroscopic analysis of substances on the surface of deteriorated XLPE revealed carbonyl compounds on the surface of the deteriorated samples. The deterioration was suppressed when a phenolic antioxidant was added: 44-thiobis-3methyl-6tert butyl phenol. The process of deterioration by PD and the effect of the antioxidant on the deterioration by PD were also discussed.
Keywords :
Fourier transform spectra; chromatography; dielectric materials; infrared spectra; mass spectra; partial discharges; polyethylene insulation; FTIR spectroscopic analysis; GC-MS; cross-linked polyethylene samples; partial discharge; polymeric dielectrics deterioration; polymeric insulating materials; Atmospheric measurements; Dielectric measurements; Dielectrics and electrical insulation; Partial discharge measurement; Partial discharges; Performance evaluation; Plastic insulation; Polyethylene; Polymers; Surface discharges; FTIR; GC-MS; absorbance; antioxidant; carbonyl compound; cross-linked polyethylene (XLPE); deterioration; partial discharge (PD); void;
Conference_Titel :
Condition Monitoring and Diagnosis, 2008. CMD 2008. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1621-9
Electronic_ISBN :
978-1-4244-1622-6
DOI :
10.1109/CMD.2008.4580274