DocumentCode
2318199
Title
High field characteristics of thin film metal electrodes relevant to field emission displays
Author
Ma, Xianyun ; Muzykov, P.G. ; Sudarshan, Tangali S.
Author_Institution
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
fYear
1998
fDate
19-24 July 1998
Firstpage
59
Lastpage
60
Abstract
For large-area FED operation, it is necessary to use spacers between the anode and cathode to prevent collapse caused by a differential pressure of at least one atmosphere. These spacers must be mechanically strong enough and have a high breakdown voltage. The higher the voltage the spacer can withstand the greater will be the brightness and contrast of the FED. In order to determine the theoretical limit to which spacers can be stressed in a vacuum gap, the high field characteristics of the plain vacuum thin film electrodes, between which the spacers are placed, must be investigated. In this study, the FEA cathode and the phosphor anode are represented by thin-film metal electrodes. This paper will address issues related to the prebreakdown and breakdown characteristics of metal thin film micrometric gaps. The results presented here can be used to define the theoretical limits to which plain vacuum gaps can be stressed in FEDs.
Keywords
electric breakdown; electrodes; field emission displays; large screen displays; FEA cathode; anode; breakdown characteristics; breakdown voltage; brightness; cathode; contrast; differential pressure; field emission displays; high field characteristics; large-area FED operation; metal thin film micrometric gaps; phosphor anode; prebreakdown characteristics; spacers; thin film metal electrodes; thin-film metal electrodes; vacuum gaps; Anodes; Cathodes; Chromium; Electric breakdown; Electrodes; Flat panel displays; Gold; Substrates; Transistors; Vacuum breakdown;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728638
Filename
728638
Link To Document