DocumentCode :
2318199
Title :
High field characteristics of thin film metal electrodes relevant to field emission displays
Author :
Ma, Xianyun ; Muzykov, P.G. ; Sudarshan, Tangali S.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
fYear :
1998
fDate :
19-24 July 1998
Firstpage :
59
Lastpage :
60
Abstract :
For large-area FED operation, it is necessary to use spacers between the anode and cathode to prevent collapse caused by a differential pressure of at least one atmosphere. These spacers must be mechanically strong enough and have a high breakdown voltage. The higher the voltage the spacer can withstand the greater will be the brightness and contrast of the FED. In order to determine the theoretical limit to which spacers can be stressed in a vacuum gap, the high field characteristics of the plain vacuum thin film electrodes, between which the spacers are placed, must be investigated. In this study, the FEA cathode and the phosphor anode are represented by thin-film metal electrodes. This paper will address issues related to the prebreakdown and breakdown characteristics of metal thin film micrometric gaps. The results presented here can be used to define the theoretical limits to which plain vacuum gaps can be stressed in FEDs.
Keywords :
electric breakdown; electrodes; field emission displays; large screen displays; FEA cathode; anode; breakdown characteristics; breakdown voltage; brightness; cathode; contrast; differential pressure; field emission displays; high field characteristics; large-area FED operation; metal thin film micrometric gaps; phosphor anode; prebreakdown characteristics; spacers; thin film metal electrodes; thin-film metal electrodes; vacuum gaps; Anodes; Cathodes; Chromium; Electric breakdown; Electrodes; Flat panel displays; Gold; Substrates; Transistors; Vacuum breakdown;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
Type :
conf
DOI :
10.1109/IVMC.1998.728638
Filename :
728638
Link To Document :
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