Title :
Enhancement of THz emission from semiconductor surfaces
Author :
Johnston, M.B. ; Dowd, A. ; Whittaker, D.M. ; Corchia, A. ; Davies, A.G. ; Linfield, E.H.
Author_Institution :
Dept. of Phys., Cambridge Univ., UK
Abstract :
We have studied the generation of coherent pulses of terahertz (THz) radiation from semiconductor surfaces both experimentally and using a Monte-Carlo carrier dynamics simulation. Collimated THz beams are observed from surface-field THz emitters and three methods of improving the efficiency of these emitters are demonstrated: (i) by applying a magnetic field, (ii) by reducing the effective refractive index of the device and (iii) by altering the geometry of the device. An enhancement of 21× is seen in a prism based GaAs/InAs THz emitter.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; indium compounds; magneto-optical effects; refractive index; semiconductor materials; submillimetre wave devices; submillimetre wave generation; GaAs-InAs; Monte-Carlo carrier dynamics simulation; THz emission enhancement; coherent pulses; collimated THz beams; device geometry; effective refractive index; efficiency; prism based GaAs/InAs THz emitter; semiconductor surfaces; surface-field THz emitters; Charge carrier processes; Gas lasers; Laser excitation; Optical pulse generation; Optical pulses; Photonic band gap; Power lasers; Quantum cascade lasers; Semiconductor lasers; Surface emitting lasers;
Conference_Titel :
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN :
0-7803-7630-7
DOI :
10.1109/THZ.2002.1037586
