Title :
Design of nMOS driving circuits integrated with field emitter arrays
Author :
Lee, Jong Duk ; Nam, Jung Hyun ; Kim, H. Hwan ; Chang Woo Oh
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
Describes the active device controlled FEA, like MCFEA (MOSFET controlled FEA). When integrating the driving circuit with FEA, the processing sequence is compatible with MOSFET and the active device in the pixel for driving FEA can be attained simply. Ideally, it requires only as high as the threshold voltage to drive an MCFEA, which gives extra benefits including stable and uniform emission current. It also reduces driving load from the capacitance of FEA gate to that of MOSFET gate. The one-transistor and one-FEA configuration is the simplest and most suitable for one-chip FED. The MOSFET acts as a line selection switch by driving the gates of MOSFET and the common sources are controlled in current or voltage driving mode.
Keywords :
MOSFET; capacitance; driver circuits; field emission displays; FEDs; MOSFET controlled FEA; active device controlled FEA; capacitance; current driving mode; driving load; field emitter arrays; line selection switch; nMOS driving circuits; processing sequence; threshold voltage; uniform emission current; voltage driving mode; Circuit simulation; Displays; Driver circuits; Field emitter arrays; MOS devices; MOSFET circuits; Manufacturing processes; Shift registers; Switches; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728640