• DocumentCode
    2318254
  • Title

    Design of nMOS driving circuits integrated with field emitter arrays

  • Author

    Lee, Jong Duk ; Nam, Jung Hyun ; Kim, H. Hwan ; Chang Woo Oh

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
  • fYear
    1998
  • fDate
    19-24 July 1998
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    Describes the active device controlled FEA, like MCFEA (MOSFET controlled FEA). When integrating the driving circuit with FEA, the processing sequence is compatible with MOSFET and the active device in the pixel for driving FEA can be attained simply. Ideally, it requires only as high as the threshold voltage to drive an MCFEA, which gives extra benefits including stable and uniform emission current. It also reduces driving load from the capacitance of FEA gate to that of MOSFET gate. The one-transistor and one-FEA configuration is the simplest and most suitable for one-chip FED. The MOSFET acts as a line selection switch by driving the gates of MOSFET and the common sources are controlled in current or voltage driving mode.
  • Keywords
    MOSFET; capacitance; driver circuits; field emission displays; FEDs; MOSFET controlled FEA; active device controlled FEA; capacitance; current driving mode; driving load; field emitter arrays; line selection switch; nMOS driving circuits; processing sequence; threshold voltage; uniform emission current; voltage driving mode; Circuit simulation; Displays; Driver circuits; Field emitter arrays; MOS devices; MOSFET circuits; Manufacturing processes; Shift registers; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1998. Eleventh International
  • Conference_Location
    Asheville, NC, USA
  • Print_ISBN
    0-7803-5096-0
  • Type

    conf

  • DOI
    10.1109/IVMC.1998.728640
  • Filename
    728640