Title :
Low cost manufacture of high frequency tunnel device systems
Author :
Kelly, Michael J.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
Devices and circuits in volume production are the subject of very strong downward pressure on costs. Superior performance is not enough for devices and circuits, even where there is a clear market. In order to achieve low manufacturing costs, the designs have to be tolerant of fluctuations in relevant device parameters, the fabrication processes have to be reliable and highly reproducible, and a user-friendly simulator is required both for reverse engineering during the development stage and right-first-time design during manufacture. While prototype devices that exploit tunneling and resonant tunneling have many attractive performance features, the process of establishing low-cost manufacturability is as yet incomplete. Some recent results are however quite promising. They also have direct implications for the eventual manufacture of devices that incorporate mesoscopic or nanometer-scale features.
Keywords :
nanoelectronics; resonant tunnelling diodes; semiconductor device manufacture; semiconductor device measurement; semiconductor device models; tunnel diodes; ASPAT diode; asymmetric spacer layer tunnel diode; circuit performance; cost pressure; development stage; device parameter fluctuation-tolerant designs; device performance; high frequency tunnel device systems; manufacturability; manufacturing costs; mesoscopic-scale features; nanometer-scale features; performance features; prototype tunneling devices; reliable reproducible fabrication processes; resonant tunneling devices; reverse engineering; right-first-time design; user-friendly simulator; volume production; Circuit simulation; Costs; Fabrication; Fluctuations; Frequency; Manufacturing processes; Production; Prototypes; Reverse engineering; Virtual manufacturing;
Conference_Titel :
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN :
0-7803-7630-7
DOI :
10.1109/THZ.2002.1037596