Optically pumped terahertz silicon lasers

Author

Pavlov, Serguei G. ; Hübers, Heinz-Wilhelm ; Zhukavin, Roman Kh ; Orlova, Ekaterina E. ; Riemann, Helge ; Shastin, Valery N.

Author_Institution

Inst. of Space Sensor Technol. & Planetary Exploration, German Aerosp. Center, Berlin, Germany

fYear

2002

fDate

2002

Firstpage

93

Lastpage

96

Abstract

Photoexcitation of shallow impurity centers in silicon at low temperatures (<10 K) yields stimulated emission from intra-center optical transitions in the terahertz range. The population inversion mechanisms are based on the peculiarities of electron-phonon interaction, leading to the existence of either a relatively long-living excited impurity state or a group of unpopulated impurity states.

Keywords

antimony; bismuth; electron-phonon interactions; elemental semiconductors; excited states; impurity states; low-temperature techniques; optical pumping; phosphorus; population inversion; semiconductor lasers; silicon; stimulated emission; submillimetre wave lasers; 10 K; Si:Bi; Si:Bi lasers; Si:P; Si:P lasers; Si:Sb; Si:Sb lasers; electron-phonon interaction; intra-center optical transitions; long-living excited impurity state; low temperature photoexcitation; optically pumped terahertz silicon lasers; population inversion mechanisms; semiconductor lasers; silicon shallow impurity centers; stimulated emission; unpopulated impurity states; Laser excitation; Laser transitions; Optical pumping; Optical sensors; Pump lasers; Quantum cascade lasers; Semiconductor impurities; Semiconductor lasers; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on

Print_ISBN

0-7803-7630-7

Type

conf

DOI

10.1109/THZ.2002.1037599

Filename

1037599