DocumentCode :
2318492
Title :
Transition metal carbide field emitters for FEA devices and high current applications
Author :
Mackie, W.A. ; Xie, Tianbao ; Davis, P.R.
Author_Institution :
Linfield Res. Inst., McMinnville, OR, USA
fYear :
1998
fDate :
19-24 July 1998
Firstpage :
84
Lastpage :
85
Abstract :
We report use of transition metal carbides in FEAs and as single emitters for applications including video displays, microwave applications, high current-small spot sources for accelerators and FELs, and cold cathodes for operation in poor vacuum environments. One continued focus is the development of ZrC film coatings for Mo FEAs. Experiments were also conducted using monolithic Mo emitters to better study individual tip interactions. Turn-on voltage lowering by 45% and increased emission stability have been reported for film deposition on Mo FEAs.
Keywords :
electron field emission; molybdenum; vacuum microelectronics; zirconium compounds; FEA device; Mo; Mo tip; ZrC; ZrC film coating; field emitter; transition metal carbide; Atmosphere; Cleaning; Coatings; Displays; Field emitter arrays; Geometry; Hydrogen; Robustness; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
Type :
conf
DOI :
10.1109/IVMC.1998.728651
Filename :
728651
Link To Document :
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