Fabrication of tungsten coated silicon based gated emitters

Tungsten coated silicon based emitters with gate structure were fabricated. Tungsten coated using PECVD gives an even covered, low stress thin film on silicon tips. The silicon dioxide layer deposited by PECVD method has less pin holes and less stress built up than the electron beam evaporation method, therefore very reliable to act as the dielectric layer. The field emitters started emission at turn on voltage of 60 volts. The break down voltage was over 300 volts.