Title :
Continuous wave terahertz quantum cascade laser
Author :
Barbieri, Stefano ; Alton, Jesse ; Evans, Michael ; Dhillon, Sukhdeep S. ; Beere, Harvey E. ; Linfield, Edmund H. ; Davies, A. Giles ; Ritchie, David A. ; Köhler, Riideger ; Tredicucci, Alessandro ; Beltram, Fabio
Author_Institution :
TeraView Ltd., Cambridge, UK
Abstract :
Reports continuous wave operation of a 4.4 THz unipolar injection quantum cascade laser grown in the AlGaAs/GaAs materials system by molecular beam epitaxy. The device operates at 4 K with a threshold current of 160 mA, and an output power of ∼25 μW. In pulsed mode the maximum operating temperature is 52 K with a threshold current of 108 mA at 4 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; quantum cascade lasers; semiconductor epitaxial layers; semiconductor growth; submillimetre wave lasers; 108 mA; 160 mA; 25 muW; 4 K; 4.4 THz; 52 K; AlGaAs-GaAs; AlGaAs/GaAs; continuous wave lasers; maximum operating temperature; molecular beam epitaxy; output power; pulsed mode; terahertz quantum cascade laser; threshold current; unipolar injection laser; Frequency; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical materials; Quantum cascade lasers; Semiconductor lasers; Solid lasers; Temperature; Threshold current;
Conference_Titel :
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN :
0-7803-7630-7
DOI :
10.1109/THZ.2002.1037602
