DocumentCode
2318565
Title
Fabrication and characteristics of emitter-sharpened double-gate race-track-shaped field emitter structure
Author
Baoping Wang ; Huang, Zhongping ; Sin, Johnny K O ; Tang, Yongming ; Wang, Chen ; Xue, Kunxing
Author_Institution
Dept. of Electron. Eng., Southeast Univ., Nanjing, China
fYear
1998
fDate
19-24 July 1998
Firstpage
94
Lastpage
95
Abstract
Experimental characteristics of the double-gate race-track-shaped field emitter structure are demonstrated for the first time. To minimize the gate current, a novel double-gate emitter-sharpened structure is presented. This structure has low turn-on voltage and low gate current. It is very suitable for practical applications.
Keywords
electron field emission; vacuum microelectronics; double-gate race-track-shaped field emitter; emitter-sharpened structure; low gate current; low turn-on voltage; Anodes; Costs; Current density; Etching; Fabrication; Gold; Low voltage; Power system modeling; Silicon; Vacuum technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728656
Filename
728656
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