Title :
High performance HBV multipliers monolithically integrated onto a host quartz substrate
Author :
David, T. ; Arscott, S. ; Munier, J.-M. ; Decoopman, T. ; Akalin, T. ; Mounaix, P. ; Mélique, X. ; Vanbésien, O. ; Beaudin, G. ; Lippens, D.
Author_Institution :
IEMN, Univ. de Lille, Villeneuve d´´Ascq, France
Abstract :
Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial lift-off and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz corresponding to an overall efficiency of 6%. In addition we have observed a 45 GHz 3 dB bandwidth centered around 300 GHz for a constant input power of 70 mW. We also report on the design of a multiplier block in a fin line technology making use of smoothly corrugated tapered sections for mode matching and filtering.
Keywords :
III-V semiconductors; MIMIC; fin line components; frequency multipliers; indium compounds; integrated circuit measurement; millimetre wave filters; mode matching; submillimetre wave filters; submillimetre wave integrated circuits; varactors; 288 GHz; 300 GHz; 45 GHz; 6 mW; 6 percent; 70 mW; HBV frequency multipliers; InP; InP heterostructure barrier varactors; bandwidth center frequency; constant input power; epitaxial lift-off techniques; filtering; fin line technology; high-performance frequency multipliers; mode matching; monolithic quartz substrate integration; multiplier block design; multiplier efficiency; smoothly corrugated tapered sections; transfer-substrate fabrication techniques; Bandwidth; Circuits; Diodes; Filtering; Frequency; Indium gallium arsenide; Matched filters; Millimeter wave devices; Substrates; Varactors;
Conference_Titel :
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN :
0-7803-7630-7
DOI :
10.1109/THZ.2002.1037604
