• DocumentCode
    2318615
  • Title

    Measured performance of silicon field emitter arrays in gaseous ambients

  • Author

    Temple, D. ; Palmer, D. ; Mancusi, J. ; Yadon, L. ; Vellenga, D. ; McGuire, G.E.

  • Author_Institution
    MCNC, Research Triangle Park, NC, USA
  • fYear
    1998
  • fDate
    19-24 July 1998
  • Firstpage
    99
  • Lastpage
    100
  • Abstract
    Silicon field emitter arrays fabricated at MCNC have demonstrated repeatable and stable operation at base pressure (5/spl times/10/sup -9/ Torr range). While it is relatively straightforward to maintain such vacuum conditions in the laboratory, in practical applications there will always be an ambient gas of some composition and pressure due to imperfect sealing of the vacuum envelope, permeation, and outgassing of the components under use. It is well known in a qualitative sense that the test environment can significantly affect the electrical performance of a field emission device. This work attempts to quantify the effect of exposure on silicon field emitter arrays operating in different ambient pressures and compositions.
  • Keywords
    electron field emission; elemental semiconductors; silicon; vacuum microelectronics; Si; field emission device; gaseous ambient; silicon field emitter array; Automatic testing; Field emitter arrays; Gases; Laboratories; Silicon; Stability; Surface morphology; System testing; Valves; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1998. Eleventh International
  • Conference_Location
    Asheville, NC, USA
  • Print_ISBN
    0-7803-5096-0
  • Type

    conf

  • DOI
    10.1109/IVMC.1998.728659
  • Filename
    728659