DocumentCode
2318615
Title
Measured performance of silicon field emitter arrays in gaseous ambients
Author
Temple, D. ; Palmer, D. ; Mancusi, J. ; Yadon, L. ; Vellenga, D. ; McGuire, G.E.
Author_Institution
MCNC, Research Triangle Park, NC, USA
fYear
1998
fDate
19-24 July 1998
Firstpage
99
Lastpage
100
Abstract
Silicon field emitter arrays fabricated at MCNC have demonstrated repeatable and stable operation at base pressure (5/spl times/10/sup -9/ Torr range). While it is relatively straightforward to maintain such vacuum conditions in the laboratory, in practical applications there will always be an ambient gas of some composition and pressure due to imperfect sealing of the vacuum envelope, permeation, and outgassing of the components under use. It is well known in a qualitative sense that the test environment can significantly affect the electrical performance of a field emission device. This work attempts to quantify the effect of exposure on silicon field emitter arrays operating in different ambient pressures and compositions.
Keywords
electron field emission; elemental semiconductors; silicon; vacuum microelectronics; Si; field emission device; gaseous ambient; silicon field emitter array; Automatic testing; Field emitter arrays; Gases; Laboratories; Silicon; Stability; Surface morphology; System testing; Valves; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728659
Filename
728659
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