Title :
Simulated I-V characteristics of the race-track-shaped field emitter structures with small spacing between the emitter and the gate
Author :
Tang, Yongming ; Wang, Chen ; Wang, Baoping ; Xue, Kunxing ; Tong, Linsu
Author_Institution :
Dept. of Electron. Eng., Southeast Univ., Nanjing, China
Abstract :
In this paper, the race-track-shaped field emitter structures with small spacing between the emitter and the gate are proposed. The iterative finite difference in the coarse and fine meshing areas and the fourth order Runge-Kutta method are used to calculate the electric field and the electron trajectories in the race-track-shaped field emitter structures. Numerical results show that the turn-on voltages of these structures with 0.25 /spl mu/m and 0.1 /spl mu/m spacing between the emitter and the gate are 100 V and 60 V respectively.
Keywords :
Runge-Kutta methods; electron field emission; finite difference methods; iterative methods; vacuum microelectronics; 0.1 micron; 0.25 micron; 100 V; 60 V; FEA; I-V characteristics; Runge-Kutta method; electric field; electron trajectory; iterative finite difference method; numerical simulation; race-track-shaped field emitter structure; turn-on voltage; Boundary conditions; Costs; Electron emission; Finite difference methods; Interpolation; Iterative methods; Low voltage; Shape; Structural engineering;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728666
