Undoped poly-Si tip lateral field emitter arrays with stable anode current by self-current limiting

In the field emitter arrays (FEAs), the stability of field emission current is an important issue to practical applications. There are many researches to improve the stability and uniformity of field emission current using the active devices such as Field-Effect-Transistors (FETs) and Thin Film Transistor (TFT). However, most of these devices have four terminals. In addition, the fabrication process becomes complicated due to the additional process of the integration of FETs and FEAs. In this paper, we propose a three-terminal new lateral poly-Si field emitter inherently integrated with Metal-Oxide-Semiconductor (MOS) system so that anode current is stable. Moreover, the fabrication process of the device is very simple.