Title :
Electron divergence measurements of a Si FEA with extracting grid
Author_Institution :
Inst. of Crystallogr., Moscow, Russia
Abstract :
In this work we studied the electron divergence of the electron beam emitted from a Si FEA and passed through the split in the extracting electrode. The aim of these studies was to reveal the initial angular distribution of emitted electrons and to analyze the influence of the split edges on electron trajectories.
Keywords :
electron field emission; elemental semiconductors; silicon; vacuum microelectronics; Si; Si FEA; angular distribution; electron beam divergence; electron trajectory; extracting grid electrode; split edge; Brightness; Computational Intelligence Society; Crystallography; Current measurement; Data mining; Electrodes; Electron beams; Electron emission; Nuclear physics; Phosphors;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728673
