DocumentCode :
2318963
Title :
Application of gated field emitter arrays in microwave amplifier tubes
Author :
Bandy, S.G. ; Green, M.C. ; Spindt, C.A. ; Hollis, M.A. ; Palmer, W.D. ; Goplen, B. ; Wintucky, E.G.
Author_Institution :
Varian Associates Inc., Palo Alto, CA, USA
fYear :
1998
fDate :
19-24 July 1998
Firstpage :
132
Lastpage :
133
Abstract :
This paper describes the progress made on the recently completed Phase II of the ARPA/NRL Vacuum Microelectronics Initiative. This program was a team effort between several manufacturers and laboratories, and represents the first major effort to incorporate field emitting cathode arrays into a specifically-designed microwave tube by a manufacturer. Using gated field emitter arrays as the source of a prebunched linear electron beam, the program goal was the delivery of a 50 W 10 GHz amplifier having at least 10 dB of gain. An efficiency of at least fifty percent was expected. Along with the elimination of the heater power supply, compactness and light weight are other attributes of the approach proposed.
Keywords :
electron field emission; microwave amplifiers; microwave tubes; vacuum microelectronics; 10 GHz; 50 W; Klystrode; gated field emitter array; microwave amplifier tube; prebunched linear electron beam source; vacuum microelectronics; Cathodes; Electromagnetic heating; Electron beams; Field emitter arrays; Field programmable gate arrays; Laboratories; Manufacturing; Microelectronics; Microwave amplifiers; Microwave antenna arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
Type :
conf
DOI :
10.1109/IVMC.1998.728677
Filename :
728677
Link To Document :
بازگشت