Observation of a new type of field-induced electron emission from a diamond-based heterostructure

The nitrogen-doped diamond films were deposited on Mo substrates by Microwave Plasma Enhanced CVD using N/sub 2//CH/sub 4/, as feedstock. A two-layer structure consisting of a a-Mo/sub 2/C buffer layer and diamond film was formed. Their field-induced electron emission characteristics, i.e., I-V characteristics and distribution of emission sites were studied using the Transparent Anode Imaging Technique. Repeatable abrupt change of "on" and "off" states of emission was observed at two corresponding specific fields during circling of both increasing and decreasing applied gap field. A plausible explanation is given to this new type of field-induced electron emission phenomenon.