Title :
BEST: a BiCMOS-compatible super-self aligned ECL technology
Author :
Moerschel, K. ; Chiu, T. ; Possanza, W. ; Lau, K.S. ; Swartz, R.G. ; Mantz, R. ; Liu, T.M. ; Lee, K. ; Archer, V. ; Hower, G. ; Mazsa, G. ; Carsia, R. ; Pavlo, J. ; Ling, M. ; Dolcin, J. ; Erceg, F. ; Egan, J. ; Fassl, C. ; Glick, J. ; Prozonic, M.
Author_Institution :
AT&T Microelectron., Allentown, PA, USA
Abstract :
A 1.5-μm design rule bipolar technology has been extracted from the NOVA process. This BiCMOS-compatible technology has been named BEST (bipolar enhanced self-aligned technology). ECL propagation delays of 87 ps at a power level of 2 mW/gate have been obtained. Because the active regions are not exposed to any RIE etches prior to emitter poly deposition, the crystalline and junction qualities are excellent. The result is an ultra-high-speed bipolar technology which also incorporates NPNs, PNPs, Schottky diodes, and polysilicon resistors
Keywords :
BIMOS integrated circuits; bipolar integrated circuits; emitter-coupled logic; integrated circuit technology; integrated logic circuits; 1.5 micron; 87 ps; BEST; BiCMOS-compatible technology; ECL propagation delays; NOVA process; NPNs; PNPs; Schottky diodes; bipolar enhanced self-aligned technology; crystalline qualities; emitter poly deposition; junction qualities; polycrystalline Si resistors; polysilicon resistors; super-self aligned ECL technology; ultra-high-speed bipolar technology; Etching; Gettering; Manufacturing processes; Microelectronics; Oxidation; Propagation delay; Refining; Resistors; Schottky diodes; Silicon;
Conference_Titel :
Custom Integrated Circuits Conference, 1990., Proceedings of the IEEE 1990
Conference_Location :
Boston, MA
DOI :
10.1109/CICC.1990.124769
