• DocumentCode
    2319615
  • Title

    Electron field emission from nanotube and other carbon containing films

  • Author

    Küttel, Olivier M. ; Gröning, O. ; Emmenegger, Ch. ; Maillard, E. ; Schlapbach, L.

  • Author_Institution
    Inst. de Phys., Fribourg Univ., Switzerland
  • fYear
    1998
  • fDate
    19-24 July 1998
  • Firstpage
    194
  • Lastpage
    195
  • Abstract
    The ultimate material for electron field emission are nanotubes. Their high aspect ratio leads to a pronounced field enhancement at the apex and hence, electrons can be extracted at very low fields. We succeeded in the deposition of nanotube films on silicon substrate by a plasma enhanced CVD microwave deposition by using a methane (1%) hydrogen (99%) mixture at a pressure of 40 mbar and at a temperature of 950/spl deg/C (these conditions are very similar to what is used in standard diamond CVD). These films are very pure (no other carbon allotropes) and show electron emission around 1 V//spl mu/m with an emission site density up to 10/sup 5/ cm/sup -2/ at 3 V//spl mu/m. We characterized the films by HRSEM and TEM and measured their emission characteristics by taking I/V curves and energy resolved measurements of the field emitted electrons.
  • Keywords
    carbon nanotubes; electron field emission; plasma CVD coatings; 40 mbar; 950 C; C; HRSEM; I-V characteristics; TEM; aspect ratio; carbon film; electron field emission; nanotube; plasma enhanced CVD microwave deposition; Carbon dioxide; Carbon nanotubes; Electron emission; Energy measurement; Energy resolution; Hydrogen; Plasma materials processing; Plasma temperature; Semiconductor films; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1998. Eleventh International
  • Conference_Location
    Asheville, NC, USA
  • Print_ISBN
    0-7803-5096-0
  • Type

    conf

  • DOI
    10.1109/IVMC.1998.728714
  • Filename
    728714