DocumentCode
2319615
Title
Electron field emission from nanotube and other carbon containing films
Author
Küttel, Olivier M. ; Gröning, O. ; Emmenegger, Ch. ; Maillard, E. ; Schlapbach, L.
Author_Institution
Inst. de Phys., Fribourg Univ., Switzerland
fYear
1998
fDate
19-24 July 1998
Firstpage
194
Lastpage
195
Abstract
The ultimate material for electron field emission are nanotubes. Their high aspect ratio leads to a pronounced field enhancement at the apex and hence, electrons can be extracted at very low fields. We succeeded in the deposition of nanotube films on silicon substrate by a plasma enhanced CVD microwave deposition by using a methane (1%) hydrogen (99%) mixture at a pressure of 40 mbar and at a temperature of 950/spl deg/C (these conditions are very similar to what is used in standard diamond CVD). These films are very pure (no other carbon allotropes) and show electron emission around 1 V//spl mu/m with an emission site density up to 10/sup 5/ cm/sup -2/ at 3 V//spl mu/m. We characterized the films by HRSEM and TEM and measured their emission characteristics by taking I/V curves and energy resolved measurements of the field emitted electrons.
Keywords
carbon nanotubes; electron field emission; plasma CVD coatings; 40 mbar; 950 C; C; HRSEM; I-V characteristics; TEM; aspect ratio; carbon film; electron field emission; nanotube; plasma enhanced CVD microwave deposition; Carbon dioxide; Carbon nanotubes; Electron emission; Energy measurement; Energy resolution; Hydrogen; Plasma materials processing; Plasma temperature; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728714
Filename
728714
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