DocumentCode
2319851
Title
Field emission mapping of low-temperature diamond and DLC films
Author
Kim, U. ; Aslam, D.M. ; Veerasamy, V.S.
Author_Institution
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fYear
1998
fDate
19-24 July 1998
Firstpage
216
Lastpage
217
Abstract
The emission current densities in the ranges of 0.1-1.1 mA cm/sup -2/ for the flat anode and 5-10 A cm/sup -2/ for the pointed tungsten anode is measured from undoped poly-diamond deposited at 450-600 C. These values, which are non-uniform, are several orders of magnitude higher than the emission current from undoped or nitrogen-doped diamond-like carbon (DLC) films.
Keywords
carbon; diamond; electron field emission; plasma CVD coatings; 450 to 600 C; C; DLC film; W; current density; field emission; flat anode; low-temperature deposition; pointed anode; polycrystalline diamond film; Anodes; Current density; Current measurement; Density measurement; Electron emission; Grain size; Optical films; Radio frequency; Semiconductor films; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728726
Filename
728726
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