DocumentCode
2319878
Title
Precise capacitor structure suitable for submicron mixed analog/digital ASICs
Author
Iida, Tetsuya ; Nakahara, Moriya ; Gotoh, Shinya ; Akiba, Hiroyuki
Author_Institution
Toshiba Semicond. Syst. Eng. Center, Kawasaki, Japan
fYear
1990
fDate
13-16 May 1990
Abstract
Four types of capacitors are investigated in order to decide the precise capacitor most suitable for submicron mixed analog/digital ASICs from the viewpoints of voltage coefficient, UDA (unified device architecture), and stray capacitance. In conclusion, it is found that a 2D type double poly capacitor is most suitable, and nitride oxide is effective as inter-poly oxide to increase capacitance per unit area
Keywords
application specific integrated circuits; capacitors; integrated circuit technology; 2D type double poly capacitor; capacitor structure; inter-poly oxide; mixed analog/digital ASICs; nitride oxide; stray capacitance; submicron ASIC; unified device architecture; voltage coefficient; Analog circuits; Application specific integrated circuits; CMOS process; CMOS technology; Capacitance; Energy consumption; MOS capacitors; Resistors; Telephony; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1990., Proceedings of the IEEE 1990
Conference_Location
Boston, MA
Type
conf
DOI
10.1109/CICC.1990.124771
Filename
124771
Link To Document