Voltage-dependent field emission energy distribution measurements (V-FEED) on wide bandgap cold cathodes

Author

Schlesser, R. ; McCarson, B.L. ; Sitar, Z.

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1998

fDate

19-24 July 1998

Firstpage

226

Lastpage

227

Abstract

Field emission mechanisms of cold cathodes were studied by combining classical I-V characterization with field emission energy distribution (FEED) analysis. Electrochemically sharpened Mo tips with typical radii of curvature of 100 nm were coated with fine powders of nominally intrinsic wide bandgap materials (diamond and cubic boron nitride) by an electrophoretic procedure. Voltage-dependent field emission energy distribution (V-FEED) measurements were used to evidence field induced band bending and to extrapolate data to flat band condition.

Keywords

III-V semiconductors; band structure; boron compounds; cathodes; diamond; electron field emission; electrophoretic coatings; elemental semiconductors; molybdenum; vacuum microelectronics; wide band gap semiconductors; 100 nm; 1000 V; 500 mum; Mo; Mo-BN; Mo-C; V-FEED; classical I-V characterization; cold cathodes; cubic boron nitride; diamond; electrochemically sharpened Mo tips; electrophoretic procedure; field emission energy distribution; field emission mechanisms; field induced band bending; fine powders; flat band condition; intrinsic wide bandgap materials; voltage-dependent field emission energy distribution; voltage-dependent field emission energy distribution measurements; wide bandgap cold cathodes; Cathodes; Coatings; Conducting materials; Current measurement; Electron emission; Energy measurement; Feeds; Photonic band gap; Powders; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1998. Eleventh International

Conference_Location

Asheville, NC, USA

Print_ISBN

0-7803-5096-0

Type

conf

DOI

10.1109/IVMC.1998.728731

Filename

728731