Title :
A study of instability in the field electron emission from amorphous diamond films
Author :
Chen, J. ; Deng, S.Z. ; Zhen, X.G. ; Xu, N.S.
Author_Institution :
Dept. of Phys., Zhongshan Univ., Guangzhou, China
Abstract :
Details are given of an experimental study of the I-V characteristics and instability of the field electron emission from amorphous diamond films prepared using magnetic field-filtered ion deposition technique. A switch-on phenomenon is observed, and two types of instability are found, i.e. fluctuation at low current and abrupt change in emission associated with local breakdown events at high current. Finally, it is found that, in order to establish a stable emission with current density approaching 50 mA/m/sup 2/, it is necessary to undergo the switch-on and local breakdown process. These phenomena are characterized and the physical mechanisms responsible for them are proposed.
Keywords :
amorphous semiconductors; diamond; electron field emission; elemental semiconductors; semiconductor thin films; C; I-V characteristics; amorphous diamond films; current density; field electron emission instability; local breakdown events; local breakdown process; magnetic field-filtered ion deposition technique; switch-on; switch-on phenomenon; Amorphous materials; Current density; Electric breakdown; Electron emission; Flat panel displays; Fluctuations; Magnetic field measurement; Magnetic fields; Magnetic films; Physics;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728733