Title :
Enhanced terahertz emission from GaAs in MBE-grown InAs/GaAs quantum dot structures
Author :
Estacio, Elmer ; Pham, Minh Hong ; Takatori, Satoru ; Cadatal-Raduban, Marilou ; Nakazato, Tomoharu ; Shimizu, Toshihiko ; Sarukura, Nobuhiko ; Somintac, Armando ; Defensor, Michael ; Garcia, Alipio ; Salvador, Arnel
Author_Institution :
Inst. of Laser Eng., Osaka Univ., Suita, Japan
Abstract :
We report on intense terahertz emission from InAs/GaAs quantum dot layers grown by molecular beam epitaxy. The emission is attributed to absorption in the GaAs layer and a strong enhancement was observed from the quantum dot samples.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum dots; terahertz wave generation; terahertz wave spectra; InAs-GaAs; MBE growth; intense terahertz emission; molecular beam epitaxy; quantum dot structures; Capacitive sensors; Effective mass; Gallium arsenide; Molecular beam epitaxial growth; Optical pulse generation; Quantum dot lasers; Quantum dots; Semiconductor lasers; Spectroscopy; Surface emitting lasers;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324946
