DocumentCode
2319995
Title
Enhanced terahertz emission from GaAs in MBE-grown InAs/GaAs quantum dot structures
Author
Estacio, Elmer ; Pham, Minh Hong ; Takatori, Satoru ; Cadatal-Raduban, Marilou ; Nakazato, Tomoharu ; Shimizu, Toshihiko ; Sarukura, Nobuhiko ; Somintac, Armando ; Defensor, Michael ; Garcia, Alipio ; Salvador, Arnel
Author_Institution
Inst. of Laser Eng., Osaka Univ., Suita, Japan
fYear
2009
fDate
21-25 Sept. 2009
Firstpage
1
Lastpage
2
Abstract
We report on intense terahertz emission from InAs/GaAs quantum dot layers grown by molecular beam epitaxy. The emission is attributed to absorption in the GaAs layer and a strong enhancement was observed from the quantum dot samples.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum dots; terahertz wave generation; terahertz wave spectra; InAs-GaAs; MBE growth; intense terahertz emission; molecular beam epitaxy; quantum dot structures; Capacitive sensors; Effective mass; Gallium arsenide; Molecular beam epitaxial growth; Optical pulse generation; Quantum dot lasers; Quantum dots; Semiconductor lasers; Spectroscopy; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location
Busan
Print_ISBN
978-1-4244-5416-7
Electronic_ISBN
978-1-4244-5417-4
Type
conf
DOI
10.1109/ICIMW.2009.5324946
Filename
5324946
Link To Document