I-V characterization on diamond deposits by secondary electron microscopy

Author

Choi, W.B. ; Batchelor, D. ; Park, M. ; Kim, J. ; Cuomo, J. ; Hren, J.

Author_Institution

Samsung Adv. Inst. of Technol., Suwon, South Korea

fYear

1998

fDate

19-24 July 1998

Firstpage

251

Lastpage

252

Abstract

Diamond based cold cathodes have proven their feasibility for vacuum microelectronics devices. Although there have been numerous attempts to understand the emission mechanism (or mechanisms) these have not yet proved conclusive. In this research in-situ I-V characterization was conducted on a small region of interest on diamond coated surfaces inside a scanning electron microscope. Diamond powder, CVD-diamond, and amorphous diamond were deposited on to pointed field emitters and flat substrates. In addition, the effects of diamond geometry were compared before and after ion etching on the same sample.

Keywords

diamond; electron field emission; scanning electron microscopy; C; CVD diamond; I-V characteristics; amorphous diamond; cold cathode; diamond coated surface; diamond powder; field emitter; ion etching; scanning electron microscopy; vacuum microelectronics device; Amorphous materials; Electron emission; Electron microscopy; Etching; Geometry; Laser ablation; Powders; Scanning electron microscopy; Surface emitting lasers; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1998. Eleventh International

Conference_Location

Asheville, NC, USA

Print_ISBN

0-7803-5096-0

Type

conf

DOI

10.1109/IVMC.1998.728743

Filename

728743