DocumentCode :
2320173
Title :
A comparative study of electron emission characteristics of silicon tip arrays with and without amorphous diamond coating
Author :
She, J.C. ; Huq, S.E. ; Chen, J. ; Deng, S.Z. ; Xu, N.S.
Author_Institution :
Dept. of Phys., Zhongshan Univ., Guangzhou, China
fYear :
1998
fDate :
19-24 July 1998
Firstpage :
253
Lastpage :
254
Abstract :
Details are given of experiments carried out to compare the field electron emission characteristics of single crystal silicon tip arrays with and without amorphous diamond coating. The coatings on the tip arrays were prepared using filtered vacuum arc plasma deposition technique. The morphology of the coating was studied in a scanning electron microscope. An anode probe technique was employed to measure the I-V characteristics, stability and turn-on fields of the tip-array emitters before and after coating. It has been found that the coating has effects not only on enhancing emission, but also stabilizing it. The physical reason for these effects is discussed.
Keywords :
diamond; electron field emission; elemental semiconductors; plasma deposited coatings; scanning electron microscopy; silicon; vacuum microelectronics; Si-C; amorphous diamond coating; field electron emission; filtered vacuum arc plasma deposition; scanning electron microscopy; single crystal silicon tip array; Amorphous materials; Coatings; Electron emission; Morphology; Plasma measurements; Plasma properties; Plasma stability; Silicon; Vacuum arcs; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
Type :
conf
DOI :
10.1109/IVMC.1998.728744
Filename :
728744
Link To Document :
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