DocumentCode
2320192
Title
A study of influence of interface on field emission from diamond films
Author
Yuan, G. ; Ji, H. ; Zhou, T.M. ; Jiang, H. ; Zhao, H.F. ; Wang, Y.Z. ; Wang, W.B. ; Jin, C.C. ; Jin, Y.X.
Author_Institution
Inst. of Phys., Acad. Sinica, Changchun, China
fYear
1998
fDate
19-24 July 1998
Firstpage
255
Lastpage
257
Abstract
Diamond films were deposited on n-type, p-type and p+ silicon wafers, and field emission was measured at high vacuum. The emission from diamond deposited on p-type silicon substrates shows two steps in I-V plots, and effective work function in high field region is lower than that in low field. These results are attributed to the effect of p-n junction between diamond and silicon substrates.
Keywords
diamond; electron field emission; p-n junctions; thin films; work function; C-Si; I-V characteristics; diamond film; field emission; interface; p-n junction; silicon substrate; work function; Chemicals; Conductive films; Electron emission; Mechanical factors; Metal-insulator structures; Semiconductor films; Silicon; Substrates; Thermal conductivity; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728745
Filename
728745
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