Field emission from amorphous carbon and silicon-carbon films, prepared by VHF CVD

Author

Kosarev, A.I. ; Andronov, A.N. ; Robozerov, S.V. ; Felter, T.E. ; Vinogradov, A.J. ; Zhirnov, V.V. ; Shutov, M.V.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1998

fDate

19-24 July 1998

Firstpage

265

Lastpage

266

Abstract

The aim of this work was to study field emission from carbon and silicon-carbon films prepared by Very High Frequency Chemical Vapour Deposition (VHF CVD). The films were prepared by capacitive discharge at a frequency f=58 MHz from argon-methane, hexane, hexane-hydrogen and hexane-silane-hydrogen mixtures on substrates of silicon, quartz and titanium-coated ceramics at temperatures of 200-250/spl deg/C. The films were characterised by AFM, Raman spectroscopy and conductivity measurements. Field electron emission was measured for an anode-to-cathode distance of 40 micron. Scanning secondary electron emission microscopy (SSEEM) measurements over sample area were performed before and after field emission measurements.

Keywords

CVD coatings; amorphous state; carbon; electron field emission; silicon compounds; 200 to 250 C; AFM; C; Raman spectroscopy; SiC; VHF CVD; amorphous carbon film; amorphous silicon-carbon film; capacitive discharge; conductivity; field electron emission; scanning secondary electron emission microscopy; very high frequency chemical vapour deposition; Amorphous materials; Area measurement; Carbon dioxide; Ceramics; Chemical vapor deposition; Electron emission; Frequency; Semiconductor films; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1998. Eleventh International

Conference_Location

Asheville, NC, USA

Print_ISBN

0-7803-5096-0

Type

conf

DOI

10.1109/IVMC.1998.728748

Filename

728748