Title :
Electron emission from etched diamond and its structural analysis
Author :
Park, M. ; Choi, W.B. ; McGregor, D.R. ; Bergman, L. ; Nemanich, R.J. ; Hren, J.J. ; Cuomo, J.J.
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Discontinuous diamond films were deposited on silicon by microwave plasma chemical vapor deposition (MPCVD). The diamond films were sharpened by argon ion etching. Field emission turn-on field was drastically lowered after sharpening. Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR) were used for structural characterization. Possible mechanisms of field emission from the etched field emitter are discussed.
Keywords :
diamond; electron field emission; plasma CVD coatings; sputter etching; C; Fourier transform infrared spectroscopy; Raman spectroscopy; argon ion etching; discontinuous diamond film; field electron emission; microwave plasma chemical vapor deposition; sharpening; silicon substrate; structural analysis; turn-on field; Argon; Chemical vapor deposition; Electron emission; Etching; Plasma applications; Plasma chemistry; Raman scattering; Semiconductor films; Silicon; Spectroscopy;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728751
