DocumentCode
2320363
Title
Field emission from bias grown diamond thin films in a CH4/N2/H2 plasma
Author
Ding, M.O. ; Gruen, D.M. ; Krauss, A.R. ; Auciello, Orlando ; Corrigan, T.D. ; Chang, R.P.H.
Author_Institution
Mater. Sci. & Chem. Div., Argonne Nat. Lab., IL, USA
fYear
1998
fDate
19-24 July 1998
Firstpage
277
Abstract
We have investigated field emission properties from diamond films grown under substrate bias conditions in a MPCVD system, with a substrate temperature of 800/spl deg/C, microwave power of 600 W and a total pressure of 11 Torr. One group of films was grown with a substrate bias at -100 V in a gas mixture of 1% N/sub 2/, 1% to 20% CH/sub 4/ in H/sub 2/, while a second group of films was grown with a substrate bias ranging from +100 V to -150 V in a gas mixture of 1% N/sub 2/-10% CH/sub 4/-89% H/sub 2/. Field emission performance in terms of turn-on field and emission current improved considerably as CH/sub 4/ concentration and negative bias voltage increase.
Keywords
diamond; electron field emission; plasma CVD coatings; -100 V; 100 to -150 V; 11 torr; 600 W; 800 C; C; CH/sub 4//N/sub 2//H/sub 2/ plasma; MPCVD growth; diamond thin film; field emission; substrate bias; Contracts; Hydrogen; Laboratories; Materials science and technology; Nuclear and plasma sciences; Plasma chemistry; Plasma materials processing; Plasma properties; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728754
Filename
728754
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