Comparative performance limits of MOSFET, MESFET and MODFET digital circuits

Author

De, V.K. ; Meindl, J.D.

Author_Institution

Rensselaer Polytech. Inst., Troy, NJ, USA

fYear

1990

fDate

13-16 May 1990

Abstract

Using the static transfer curves derived from analytical drain current and threshold voltage models for short-channel MOSFETs, MESFETs and MODFETs, the FET scaling limits in CMOS and E/D MOSFET (NMOS), MESFET, and MODFET DCFL digital circuits are determined as 0.025 mu m, 0.05 mu m, 0.075 mu m, and 0.075 mu m (respectively) from noise margin considerations. The corresponding delay times of ring oscillators using these minimum length devices are shown to be 6.37 ps, 5.07 ps. 2.44 ps and 2.61 ps, respectively.<>

Keywords

MOS integrated circuits; Schottky gate field effect transistors; delays; digital integrated circuits; field effect integrated circuits; high electron mobility transistors; insulated gate field effect transistors; semiconductor device models; 0.025 to 0.075 micron; 2.44 to 6.37 ps; CMOS; DCFL digital circuits; FET scaling limits; MESFET; MODFET; MOSFET; NMOS; delay times; drain current models; enhancement/depletion devices; noise margin; ring oscillators; short-channel; static transfer curves; threshold voltage models; CMOS digital integrated circuits; Digital circuits; FETs; HEMTs; MESFET circuits; MODFET circuits; MOS devices; MOSFET circuits; Semiconductor device modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1990., Proceedings of the IEEE 1990

Conference_Location

Boston, MA, USA

Type

conf

DOI

10.1109/CICC.1990.124774

Filename

124774