New structures for carrier-controlled ferromagnetism in Cd/sub 1-x/Mn/sub x/Te quantum wells

Author

Tatarenko, S. ; Bertolini, M. ; Boukari, H. ; Ferrand, D. ; Cibert, J. ; Gilles, B. ; Maslana, W. ; Kossacki, P. ; Gaj, J.A.

Author_Institution

Lab. de Spectrometrie Phys., Univ. Joseph Fourier Grenoble, Saint Martin d´´Heres, France

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

11

Lastpage

12

Abstract

The ability to control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints, particularly in view of recent developments in magneto-electronics and spintronics. Diluted magnetic semiconductors (D.M.S), where ferromagnetic interactions are mediated through the carriers, are particularly attracting materials since they offer the possibility to modulate the magnetic properties by modulating the carrier density. The first demonstration has been performed with III-V D.M.S layers inserted in a Schottky diode.

Keywords

cadmium compounds; carrier density; ferromagnetic materials; interface magnetism; manganese compounds; semiconductor quantum wells; semimagnetic semiconductors; Cd/sub 1-x/Mn/sub x/Te; Cd/sub 1-x/Mn/sub x/Te quantum wells; carrier density; carrier-controlled ferromagnetism; diluted magnetic semiconductors; ferromagnetic interactions; magnetic properties; magneto-electronics; spintronics; Charge carrier density; Magnetic materials; Magnetic modulators; Magnetic properties; Magnetic semiconductors; Schottky diodes; Semiconductor diodes; Tellurium; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037735

Filename

1037735