Properties of quaternary alloy ferromagnetic semiconductor (InGaMn)As grown on InP

Quaternary alloy magnetic semiconductor (InGaMn)As has many potential advantages which cannot be realized by ternary alloy magnetic semiconductors. For example, the bandgap energy, easy magnetization axis and band structure can be controlled by changing the In content of (InGaMn)As. In particular, the bandgap can be tuned at the wavelength of 1.3 or 1.55 /spl mu/m for optical communication devices. Recently, we have successfully grown ferromagnetic [(In/sub y/Ga/sub 1-y/)/sub 1-x/Mn/sub x/]As (y: 0-0.6) on InP[001] substrates by low-temperature MBE. Also, relatively high Curie temperature T/sub C/ above 100 K of (InGaMn)As was reported. Although (InGaMn)As is a very attractive magnetic semiconductor, only two papers were published on this material. This paper presents a more systematic study on the magnetic, transport, and magneto-optical properties of (InGaMn)As.