Low voltage tunable barium strontium titanate thin film capacitors for RF and microwave applications

Author

Tombak, A. ; Tito Ayguavives, F. ; Maria, J.-P. ; Stauf, G.T. ; Kingon, A.I. ; Mortazawi, A.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

3

fYear

2000

fDate

11-16 June 2000

Firstpage

1345

Abstract

In this paper, we report on the fabrication and testing of thin film barium strontium titanate (BST) based capacitors for RF and microwave components. At 7 V DC applied, MOCVD BST parallel plate capacitors yielded 60% (2.4:1) tunability between 45 MHz and 200 MHz. In this frequency range, the dielectric loss tangent was typically 0.004. Measured results for the frequency dependent dielectric permittivity and tunability at large RF voltage amplitudes are presented.

Keywords

Barium compounds; CVD coatings; Capacitors; Circuit tuning; Dielectric losses; Low-power electronics; MMIC; Permittivity; Strontium compounds; UHF integrated circuits; (Ba/sub 0.7/Sr/sub 0.3/)TiO/sub 3/; 45 to 200 MHz; 7 V; MOCVD; RF components; dielectric loss tangent; frequency dependent dielectric permittivity; microwave components; parallel plate capacitors; thin film capacitors; tunability; voltage amplitudes; Barium; Binary search trees; Capacitors; Dielectric losses; Dielectric thin films; Low voltage; Radio frequency; Strontium; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.861790

Filename

861790