• DocumentCode
    23206
  • Title

    Advanced TSV-Based Crystal Resonator Devices Using 3-D Integration Scheme With Hermetic Sealing

  • Author

    Jian-Yu Shih ; Yen-Chi Chen ; Chih-Hung Chiu ; Yu-Chen Hu ; Chung-Lun Lo ; Chi-Chung Chang ; Kuan-Neng Chen

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    34
  • Issue
    8
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    1041
  • Lastpage
    1043
  • Abstract
    An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.
  • Keywords
    crystal resonators; encapsulation; hermetic seals; leakage currents; semiconductor device packaging; three-dimensional integrated circuits; Cu; Si; 3-D integration; crystal resonator through-silicon via (TSV);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2265335
  • Filename
    6553120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=23206