Mesoscopic island structure at GaAs/(AlGa)As interfaces grown by MBE

Author

Gottwaldt, L. ; Pierz, K. ; Ahlers, F.J. ; Göbel, E.O. ; Nau, S. ; Torunski, T. ; Stolz, W.

Author_Institution

Phys. Tech. Bundesanstalt, Braunschweig, Germany

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

27

Lastpage

28

Abstract

The study of interface morphology is of key importance for the optical as well as the transport properties of low-dimensional structures and can also lead to detailed understanding of growth processes. In this paper we report the results of systematic studies of the influence of the growth temperature on the morphology of GaAs/(AlGa)As quantum well (QW) interfaces. A combination of highly selective etching and subsequent atomic force microscopy (AFM) was used to determine the interface morphology. This technique enables three-dimensional mapping of the interfaces with an atomic height resolution on lateral scales from 10 nm up to 50 /spl mu/m.

Keywords

III-V semiconductors; aluminium compounds; atomic force microscopy; etching; gallium arsenide; interface structure; island structure; mesoscopic systems; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; 10 nm to 50 micron; AFM; GaAs-(AlGa)As; GaAs/(AlGa)As interfaces; MBE; atomic force microscopy; atomic height resolution; growth temperature; highly selective etching; interface morphology; low-dimensional structures; mesoscopic island structure; morphology; quantum well interfaces; three-dimensional mapping; Excitons; Gallium arsenide; Inorganic materials; Luminescence; Morphology; Optical materials; Organic chemicals; Organic materials; Smoothing methods; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037743

Filename

1037743