• DocumentCode
    2320621
  • Title

    Transport phenomena related to electron field emission from semiconductors through thick oxide layers

  • Author

    Filip, V. ; Nicolaescu, D. ; Okuyama, F. ; Itoh, Junji ; Plavitu, C.N.

  • Author_Institution
    Fac. of Phys., Bucharest Univ., Romania
  • fYear
    1998
  • fDate
    19-24 July 1998
  • Firstpage
    297
  • Lastpage
    298
  • Abstract
    Owing to the small density of conduction electrons in the oxide layer, the electric field deeply penetrates the solid. This fact, together with the strong interactions with the oxide lattice, may lead to an electron accumulation effect near the emitting surface. Consequently, an important increase of the emission current density is expected. The electron current invariance induces then a reduction of the emitting surface by the same factor with a corresponding increase of the local Joule heating. This effect could provide an alternative insight to the local damaging of the oxidized emitting surfaces.
  • Keywords
    electron field emission; Joule heating; conduction electron density; current density; electric field; electron accumulation; electron field emission; electron transport; oxide layer; semiconductor; Current density; Electron emission; Heating; Lattices; Lead compounds; Physics; Shape; Solids; Surface impedance; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1998. Eleventh International
  • Conference_Location
    Asheville, NC, USA
  • Print_ISBN
    0-7803-5096-0
  • Type

    conf

  • DOI
    10.1109/IVMC.1998.728765
  • Filename
    728765