Title :
Transport phenomena related to electron field emission from semiconductors through thick oxide layers
Author :
Filip, V. ; Nicolaescu, D. ; Okuyama, F. ; Itoh, Junji ; Plavitu, C.N.
Author_Institution :
Fac. of Phys., Bucharest Univ., Romania
Abstract :
Owing to the small density of conduction electrons in the oxide layer, the electric field deeply penetrates the solid. This fact, together with the strong interactions with the oxide lattice, may lead to an electron accumulation effect near the emitting surface. Consequently, an important increase of the emission current density is expected. The electron current invariance induces then a reduction of the emitting surface by the same factor with a corresponding increase of the local Joule heating. This effect could provide an alternative insight to the local damaging of the oxidized emitting surfaces.
Keywords :
electron field emission; Joule heating; conduction electron density; current density; electric field; electron accumulation; electron field emission; electron transport; oxide layer; semiconductor; Current density; Electron emission; Heating; Lattices; Lead compounds; Physics; Shape; Solids; Surface impedance; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728765