Title :
Growth of GaAs based quantum cascade lasers
Author :
Strasser, G. ; Schrenk, W. ; Anders, S. ; Pflügl, C. ; Gornik, E.
Author_Institution :
Solid State Electron. Inst., Tech. Univ. of Vienna, Austria
Abstract :
Quantum cascade lasers (QCLs) based on intersubband/interminiband transitions in InGaAs/InAlAs/InP and GaAs/AlGaAs are unipolar intraband semiconductor lasers. Their wavelength can be tailored over a wide range of frequencies by adapting layer thicknesses of the same material. We report about our latest improvements in the realisation of GaAs based quantum cascade lasers. Intersubband transitions in coupled quantum wells and intraband transitions in a finite chirped superlattice are used to demonstrate lasing.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared spectra; laser transitions; molecular beam epitaxial growth; photoconductivity; photoluminescence; quantum cascade lasers; transmission electron microscopy; GaAs based quantum cascade lasers; GaAs-AlGaAs; InGaAs-InAlAs-InP; adapting layer thicknesses; coupled quantum wells; finite chirped superlattice; intersubband/interminiband transitions; intraband transitions; unipolar intraband semiconductor lasers; Frequency; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Laser transitions; Optical materials; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037746
