Tip surface silicidation to improve emission behavior of field emitter arrays

Author

Lee, Jong Duk ; Uh, Hyung Soo ; Shim, Byung Chang ; Cho, Euo Sik ; Oh, Chang Woo ; Kwon, Sang Jik

Author_Institution

Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., South Korea

fYear

1998

fDate

19-24 July 1998

Firstpage

304

Lastpage

305

Abstract

In this study, various metal silicides including Ti and Co were applied to gated poly-Si field emitter arrays, and their emission properties have been compared. Silicides were produced by deposition of 25-nm-thick metals on emitter tips through the gate opening and subsequent rapid thermal annealing under N/sub 2/ environment with flow rate of 7.5 slpm. XRD measurement was done to look the constituent and dominant binds of metal-Si compounds. It was found that all the metal layers were completely transformed into MSi/sub 2/ (M: metal element).

Keywords

electron field emission; elemental semiconductors; rapid thermal annealing; silicon; vacuum microelectronics; Si-MoSi/sub 2/; Si-TiSi/sub 2/; XRD; electron emission; metal silicide; polycide; polysilicon field emitter array; rapid thermal annealing; tip surface silicidation; Coatings; Electron emission; Field emitter arrays; Microwave antenna arrays; Silicidation; Silicides; Surface contamination; Surface treatment; Thermal conductivity; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1998. Eleventh International

Conference_Location

Asheville, NC, USA

Print_ISBN

0-7803-5096-0

Type

conf

DOI

10.1109/IVMC.1998.728769

Filename

728769