Thermal behavior of GaAs/AlGaAs quantum-cascade-lasers: effect of the Al content in the barrier layers

Author

Ortiz, V. ; Page, H. ; Becker, C. ; Sirtori, C.

Author_Institution

Thales Res. & Technol., Orsay, France

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

35

Lastpage

36

Abstract

Recently, room temperature (RT) operation of GaAs-based quantum cascade (QC) lasers emitting at /spl sim/9 /spl mu/m was obtained by increasing the Al content in the barrier material. This allowed a stronger electron confinement and the reduction of the thermally activated leakage processes. Today, these devices operate up to 60/spl deg/C. Here, we present an in-depth study of the influence of the Al content on the thermal behavior of QC lasers. Also, we present new designs of QC structures based on the possibility to change the Al content during the MBE growth.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; molecular beam epitaxial growth; quantum cascade lasers; thermo-optical effects; 60 degC; 9 micron; Al; Al content; GaAs-AlGaAs; GaAs-based quantum cascade lasers; GaAs/AlGaAs quantum-cascade-lasers; MBE growth; QC structures; barrier layers; barrier material; electron confinement; room temperature operation; thermal behavior; thermally activated leakage processes; Artificial intelligence; Composite materials; Electrons; Gallium arsenide; Impedance; Optical materials; Potential well; Quantum cascade lasers; Surface emitting lasers; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037747

Filename

1037747