MBE growth of terahertz quantum cascade semiconductor lasers

Author

Beere, H.E. ; Linfield, E.H. ; Davies, A.G. ; Ritchie, D.A. ; Kohler, R. ; Tredicucci, A. ; Beltram, F. ; Rochat, M. ; Ajili, L. ; Willenberg, H. ; Faist, J.

Author_Institution

Cavendish Lab., Cambridge Univ., UK

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

37

Lastpage

38

Abstract

We report here the growth, fabrication, and operation of two different quantum cascade laser structures that emit in a single cavity mode in the terahertz regime; Both laser designs employ a chirped superlattice active region in a QC structure, comprising seven GaAs quantum wells separated by Al/sub 0.15/Ga/sub 0.85/As barriers, with a novel type of waveguide that provides confinement of the very long wavelength radiation to a very thin, highly doped buried layer.

Keywords

III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; optical fabrication; quantum cascade lasers; semiconductor superlattices; waveguide lasers; Al/sub 0.15/Ga/sub 0.85/As; Al/sub 0.15/Ga/sub 0.85/As barriers; GaAs; GaAs quantum well lasers; GaAs quantum wells; MBE growth; QC structure; chirped superlattice active region; highly doped buried layer; quantum cascade laser structures; single cavity mode; terahertz quantum cascade semiconductor lasers; terahertz regime; waveguide lasers; Chirp; Gallium arsenide; Laser modes; Optical design; Optical device fabrication; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Semiconductor superlattices; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037748

Filename

1037748