Title :
InAs-based quantum cascade light emitting structures containing a double plasmon waveguide
Author :
Ohtani, K. ; Sakuma, H. ; Ohno, H.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
Type-II InAs/GaSb/AlSb intersubband light emitters have a great potential over the type-I intersubband emitters because of its unique InAs/GaSb broken gap, the large optical gain and long optical phonon non-radiative relaxation time expected from the small effective mass of InAs quantum well (QW). Here we describe molecular epitaxy growth of InAs-based quantum cascade (QC) structures containing a double plasmon waveguide and its emission properties.
Keywords :
III-V semiconductors; electroluminescence; indium compounds; molecular beam epitaxial growth; plasmons; quantum cascade lasers; ridge waveguides; waveguide lasers; InAs quantum well; InAs-GaSb-AlSb; InAs-based quantum cascade light emitting structures; InAs-based quantum cascade structures; InAs/GaSb broken gap; double plasmon waveguide; large optical gain; long optical phonon nonradiative relaxation time; molecular epitaxy growth; small effective mass; type-I intersubband emitters; type-II InAs/GaSb/AlSb intersubband light emitters; Current density; Doping; Electroluminescence; Intelligent systems; Laboratories; Molecular beam epitaxial growth; Optical waveguides; Plasmons; Stimulated emission; Substrates;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037749
